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SMJ-TE

产品详情

IGBT缓冲吸收电容: SMJ-TE系列

产品特点:

1:迈拉胶带封装,阻燃树脂灌注;

2:镀锡铜线轴向引出;

3:耐压高,损耗(tgδ)小,温升低;

4:自感(ESL)小,等效串联电阻(ESR)小;

5:高脉冲电流,高dv/dt承受能力。

Introduction:

1: Mylar tape, Sealed with resin;
2: Axial leads with Tinned copper wire;

3: Resistance to high voltage, low tgδ,low temperaturerise;

4: Low ESL and ESR;

5: High pulse Current.


应用:

1:IGBT 缓冲吸收。

2:广泛应用于电力电子设备中开关器件关断时的尖峰电压,尖峰电流吸收保护。

Application

1: IGBT Snubber.

2: Widely used in power electronic equipmentwhen the peak voltage, peak current absorption protection.


性能参数/Technical data


工作温度范围/Operating temperature range

Max Operating temperature:  + 85℃

Upper category temperature: +85℃

Lower category temperature: -40℃

容量范围/capacitance range

0.1μF~5.6μF

额定电压/ Rated voltage

630V.DC~2000V.DC

容量偏差/Cap.tol

±5%(J) ;±10%(K)

耐电压/Withstand voltage

1.5Un DC/10S

损耗角正切/Dissipation factor

tgδ≤0.0005  C≤1μF f=10KHz

tgδ≤0.001  C≥1μF f=10KHz

绝缘电阻/Insulation resistance

C≤0.33μF RS≥15000 MΩ  (at20℃ 100V.DC 60S)

C>0.33μF  RS*C≥5000S(at20℃ 100V.DC 60S)

耐脉冲电流冲击/Withstand strike current

200V/μS~1500V/μS

预期寿命/Life expectancy

100000h(Un;Θhotspot≤85°C)

引用标准/Reference standard

IEC61071;IEC 61881


外形图:



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